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PD - 95007
IRFP250NPBF
l l l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free
HEXFET(R) Power MOSFET
D
VDSS = 200V RDS(on) = 0.075
G S
ID = 30A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
30 21 120 214 1.4 20 315 30 21 8.6 -55 to +175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.7 --- 40
Units
C/W
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1
2/11/04
IRFP250NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 200 --- --- 2.0 17 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.26 --- --- --- --- --- --- --- --- --- --- 14 43 41 33 4.5 7.5 2159 315 83
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.075 VGS = 10V, ID = 18A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 18A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 123 ID = 18A 21 nC VDS = 160V 57 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V --- ID = 18A ns --- RG = 3.9 --- RD = 5.5, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 30 showing the A G integral reverse --- --- 120 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 18A, VGS = 0V --- 186 279 ns TJ = 25C, IF = 18A --- 1.3 2.0 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by Starting TJ = 25C, L = 1.9mH
max. junction temperature. (See Fig. 11) RG = 25, IAS = 18A. (See Figure 12)
ISD 18A, di/dt 374A/s, VDD V(BR)DSS,
TJ 175C
Pulse width 300s; duty cycle 2%.
2
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IRFP250NPBF
1000
I D , Drain-to-Source Current (A)
100
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1000
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
4.5V
1
0.1
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 175 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
1000
3.5 3.0 2.5 2.0 1.5 1.0 0.5
ID = 30A
I D , Drain-to-Source Current (A)
100
TJ = 175 C
10
TJ = 25 C
1
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFP250NPBF
5000
4000
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
16
ID = 18A
V DS= 160V V DS= 100V V DS= 40V
C, Capacitance(pF)
12
3000
Ciss
8
2000
Coss
1000
4
Crss
0 1 10 100 1000
0
0
20
40
60
80
100
VDS Drain-to-Source Voltage (V) ,
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
1000
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 175 C
10
ID , Drain Current (A)
100
100 10us
TJ = 25 C
1
100us 10 1ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
TC = 25 C TJ = 175 C Single Pulse
1 10 100
10ms 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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IRFP250NPBF
35 35 30 30
V DS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
RD
D.U.T.
+ VDD
ID , Drain Current (A) ID , Drain Current (A)
25 25 20 20 15 15 10 10 5 0 5 0 25 25
-
Fig 10a. Switching Time Test Circuit
VDS 90%
50 75 100 125 150 50 T 75 125 150 , Case100 Temperature ( C)
TC CCase Temperature ( C) ,
175 175
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
1
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
D = 0.50
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP250NPBF
EAS , Single Pulse Avalanche Energy (mJ)
800
15V
VDS
L
DRIVER
600
ID 7.3A 13A BOTTOM 18A TOP
RG
20V
D.U.T
IAS tp
+ - VDD
A
400
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
200
0
25
Starting TJ , Junction Temperature ( C)
50
75
100
125
150
175
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP250NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFP250NPBF
TO-247AC Package Outline
15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A-
Dimensions are shown in millimeters (inches)
-D5.30 (.209) 4.70 (.185)
0.25 (.010) M D B M 5.50 (.217)
2.50 (.089) 1.50 (.059) 4
20.30 (.800) 19.70 (.775) 1 2 3
2X
5.50 (.217) 4.50 (.177)
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC.
-C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145)
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS
0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087)
LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4-
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
IRFPE30
56 035H 57
DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04 8 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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